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The third generation semiconductor material, silicon carbide (SiC), is becoming a star material in the field of power electronics due to its excellent physical properties. China silicon carbide powder production has been increasing to meet the growing demand. The high purity silicon carbide powder has the advantages of high critical breakdown electric field, high thermal conductivity, and high electron saturation drift speed, which makes it excellent in high temperature, high power, high pressure, high frequency and other application scenarios. As a result, many SiC powder suppliers are experiencing increased interest from various industries, especially in sic 5g applications.
Silicon Carbide (SiC), known for its exceptional properties, is a compound of silicon and carbon. The silicon carbide applications are rapidly expanding across multiple sectors.
High Thermal Conductivity: SiC has a higher thermal conductivity than many other materials, including silicon, which makes it excellent for heat dissipation in high-power applications.
Wide Bandgap: With a bandgap of approximately 3.2 electron volts (eV), SiC is a wide bandgap semiconductor, which allows it to operate at higher temperatures and frequencies than silicon.
High Breakdown Field: SiC can withstand high electric fields without breaking down, making it suitable for high-voltage applications.
High Saturated Electron Drift Velocity: SiC has a higher electron drift velocity than silicon, which contributes to its superior switching performance.
In addition, there are chemical stability, high hardness, low dielectric constant, radiation resistance, high temperature operation, corrosion resistance and other characteristics.
The synthesis methods of SiC powder are diverse, including solid-phase method, liquid-phase method, and vapor-phase method. The solid-phase method has a lower cost and is easy to industrialize, but the impurity content of the synthesized powder is higher. The powder synthesized by the liquid-phase method has high purity, but the process is complex. The vapor-phase method can synthesize high-purity, small-sized powder, but the cost is higher and the yield is lower.
Silicon Carbide (SiC) is playing a pivotal role in the global shift towards clean energy by enabling more efficient and reliable power electronics.
Enhancing Efficiency and Performance: SiC's low resistance and fast switching characteristics significantly improve the efficiency of power electronic devices, especially in electric vehicles and solar inverters, helping to enhance overall system performance and reduce energy loss.
Advancing Renewable Energy and Electric Vehicles: The high reliability and high-temperature tolerance of SiC in smart grids and high-voltage applications promote the effective integration of renewable energy and the widespread adoption of electric vehicles, supporting the shift to a cleaner and more sustainable energy system.
Quality control procedures for SiC powder mainly include:
Strictly selecting raw materials to ensure their quality meets the standards;
Continuously monitoring key parameters such as temperature and pressure during the production process to ensure precise production conditions;
Conducting meticulous product testing on the produced SiC powder, including key performance indicators such as purity and particle size;
Setting and tracking quality objectives and key performance indicators to ensure continuous product quality improvement;
Formulating and implementing detailed quality control plans, and reasonably allocating resources to support quality control activities;
Finally, making continuous quality improvements and keeping detailed records for product traceability and quality analysis.
