English
High-purity conductive silicon carbide (SiC) powder is a key raw material for growing high-quality crystals. Our company uses advanced Chemical Vapor Deposition (CVD) technology to synthesize this powder. The CVD process involves reacting carbon and silicon source gases (such as methane and silane) at high temperatures to deposit silicon carbide on a substrate. This method allows for precise control of crystal growth in a controlled environment, ensuring high purity and excellent electrical properties.
After synthesizing SiC powder using the CVD method, we further use the Physical Vapor Transport (PVT) method to grow large-size SiC crystals. The PVT method involves heating SiC powder in a high-temperature furnace above its melting point, using a temperature gradient to gradually solidify and grow crystals on a pedestal. This process requires precise control of the furnace temperature, pressure, and gas environment to optimize crystal growth conditions. After the crystal growth is completed, the crystal is slowly cooled and then subjected to cutting, polishing, and other post-processing to obtain high-performance SiC crystals used in fields such as high-end electronic devices, optoelectronic devices, and sensors. The controllability and repeatability of this method make it an ideal choice for synthesizing high-performance SiC materials.
The crystals grown through this method exhibit several distinctive characteristics that make them highly desirable for various applications:
1. High Purity: The SiC crystals produced are of exceptional purity, which is crucial for applications requiring minimal impurities, such as in semiconductor devices.
2. Low Defect Density: The low defect density ensures that the crystals have fewer dislocations and inclusions, leading to improved performance in electronic and optoelectronic devices.
3. Uniformity: The uniformity of the crystal structure is maintained throughout the growth process, which is essential for consistent device performance.
4. Thermal Stability: SiC crystals exhibit excellent thermal stability, allowing them to operate in high-temperature environments without degradation.
5. Electrical Conductivity: The conductive nature of the SiC crystals is tailored to meet the specific requirements of high-power and high-frequency electronic devices.
6. Mechanical Strength: The mechanical strength of the crystals is an important factor for applications where the material will be subjected to mechanical stress.
7. Optical Properties: For optoelectronic applications, the optical properties of the SiC crystals, such as transparency and light absorption, are carefully controlled during the growth process.
These characteristics make the SiC crystals grown by our methods highly suitable for applications in the electronics industry, where high performance and reliability are paramount.
