English
The SiC industry chain includes substrate material preparation, epitaxial growth, chip design, device manufacturing, and applications. The substrate occupies a core position in the manufacturing of SiC devices, and high-purity SiC powder is essential for preparing SiC single crystals.
According to the difference in electrical properties, SiC substrates can be divided into semi-insulating SiC substrates and conductive SiC substrates. Conductive SiC substrates are mainly used to manufacture power devices. SiC power devices, with their excellent high-voltage resistance, high-temperature resistance, and low loss performance, are well-suited for the requirements of power devices and have been rapidly promoted and applied in the field of new energy vehicles in recent years.
Compared with silicon-based devices, SiC devices have advantages such as low conduction loss, high switching frequency, and high working voltage, which can improve the system's electrical energy conversion efficiency and increase the driving range.
The bandgap width of SiC is about three times that of silicon-based materials, the critical breakdown field strength is about ten times that of silicon-based materials, the thermal conductivity is about three times that of silicon-based materials, and the electron saturation drift rate is about twice that of silicon-based materials.
