English
Based on the difference in electrical properties, silicon carbide (SiC) substrates can be divided into two types: semi-insulating SiC substrates and conductive SiC substrates. Semi-insulating SiC substrates are mainly used to manufacture gallium nitride (GaN) RF devices and optoelectronic devices. The silicon carbide applications in this field are expanding rapidly, with the sic powder supplier playing a crucial role in the supply chain. By growing a gallium nitride epitaxial layer on the semi-insulating SiC substrate, SiC-based gallium nitride epitaxial wafers are obtained, which can be further processed into HEMT and other gallium nitride RF devices. These devices have important value in high-frequency applications such as SiC 5G communication, satellite communication, and radar systems. The development of 5G SiC technology has significantly enhanced the performance of these high-frequency devices, making them crucial components in advanced communication networks. Moreover, sic automotive applications are also benefiting from these technological advancements, particularly in electric vehicle power systems.
